1103mm (W) x 3379mm (D) x 1925mm (H)

The SRTF-302LP system is designed based on a resistively heated, single wafer furnace technology to address conventional batch furnace thermal applications as well as RTP applications up to 1100°C. The system provides excellent process repeatability and stability at a minimum cost of ownership.


Silicidation (TiSi, CoSi, NiSi, WSi etc.)
Implant anneal
Oxidation (Dry & Wet)
Glass reflow
Film Densification

Key Benefits & Specifications

Simple and Robust Design
Oxygen-Free Ambient: <30ppm
Two Vacuum Capable load locks
Built-in Two FOUP Openers
Wide Operating Termperaure Range: 200~1100°C
Excellent Process Uniformity:<1%(1sigma)
Excellent Process Repeatability: <3°C
Wide Process Window
Fast Ramp Rate: up to 100°C/s at 1100°C
Competitive Throughput
Fast Installation: 1day
Process Qualification: 1day
Minimum Maintenance: every 6 to 12 months
Minimum Consumables:
– Quartz tubes, thermocouples, heater units
– O-rings
Minimal Facility Requirement
– Electricity: 3 phase 220VAC 25kVA
– Process gases: up to 2 lines
– Cooling water
Small Footprint
Energy Efficient (Power Consumption < 10kW at 1100°C)