1050mm (W) x 1600mm (D) x 2000mm (H)

The SAO-302LP system is designed based on a resistively heated, stacked process module technology to address ambient controlled, low temperature annealing applications up to 450°C. The system processes five wafers simultaneously and provides excellent process repeatability and stability at a minimum cost of ownership.


Cu Annealing
Al Sintering
H2 Annealing
SOD Annealing
Low-k Dielectrics Annealing
Polyimide Bake
SiLK Annealing
Silicidation (NiSi)
Photoresist Bake & Reflow
Low Temperature LPCVD

Key Benefits & Specifications

Simple and Robust Design
Vacuum Compatible & Ambient Control
– low residual O2 (<5ppm)
– H2 or forming gas compatible
Operating Temperature Range
– 100 ~ 450°C
– H2 or forming gas compatible
Excellent Process Uniformity: <1%
Excellent Process Repeatability: <3°C (range)
Competitive Throughput
Fast Installation: 0.5 day
Two Vacuum Capable loadlocks
Minimal Maintenance: every 6 to 12 months
No Consumables
Minimal Facility Requirement:
– Electricity: 3phase 220VAC 30A
– Process gases: up to 2 lines
– Cooling water
Small Footprint
Energy Efficient: < 7KW steady state, 12 KW max
Built-in Two FOUP Openers