Multi-Wavelength Raman Spectroscopy

The MRS-300 system design is based on a micro Raman measurement technique and WaferMasters’ proprietary high resolution polychromator technology. It allows multi-wavelength micro Raman characterization of a wide range of materials used in semiconductor manufacturing. The polychromator, the heart of the MRS-300 system, has no moving parts to ensure high measurement accuracy, repeatability and stability. The Raman signals are sequentially measured by changing excitation wavelengths without moving the specimen under characterization. This provides depth profiling of the Raman spectra at the same measurement site, providing very accurate, site specific information on the specimen.

Applications

Non-destructive Material Characterization and In-Line process Monitoring and Diagnosis
General
– Lattice Strain Characterization
– Localized Strain Measurement
– Depth Profiling of Lattice Strain
– Crystalline Quality Measurement
– Material Homogeneity Measurement
Ge Content Measurement in SiGe
Ultra-Shallow Junction Characterization
Silicide/Si Interface Characterization
Dielectric/Si Interface Characterization
General
– Lattice Strain Characterization
– Localized Strain Measurement
– Depth Profiling of Lattice Strain
– Crystalline Quality Measurement
– Material Homogeneity Measurement
Ge Content Measurement in SiGe
Ultra-Shallow Junction Characterization
Silicide/Si Interface Characterization
Dielectric/Si Interface Characterization

Key Benefits & Specifications

Simple and Robust Design

Excitation Source: Multi-wavelength Ar+ Laser
– 457.9 nm
– 488.0 nm
– 514.5 nm
-Other wavelengths can be selected depending on material and device structures

Spectrograph
– Focal length:2m
– Grating:2400l/mm
– f-Number:14
– Number of CCD Camera:3(4 stage TE cooled, Low Noise, High Sensitivity)

Measurement Performance (Bare Si Wafer)
– Resolution at All λ:0.1cm^-1
– Stress Sensitivity at All λ:(31~46MPa)
– Accuracy at All λ:0.1cm^-1
– Repeatability at All λ:0.1cm^-1
– Stability at All λ:0.1cm^-1

Objective Lens Magnification
– 2.5x for notch alignment
– 5x, 10x, 20x, 50x for measurement

Optical Spatial Resolution:
– 4.1μm ~ 1.0μm (Objective Lens dependent)

Measures both Bare Si or Patterened Wafers
Built-in Two FOUP Openers